71V416S10BEGI
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA Tube/Tray
廠商型號(hào):
71V416S10BEGI
芯天下內(nèi)部編號(hào):
164-71V416S10BEGI
生產(chǎn)廠商:
integrated device technology (idt)
描述:
SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA Tube/Tray
產(chǎn)品類別:
Memory|SRAM Chip
客戶編號(hào):
規(guī)格書:
查看PDF
所示圖像僅為示意圖。請(qǐng)從產(chǎn)品數(shù)據(jù)表中獲得準(zhǔn)確的規(guī)格。
庫(kù)存與訂購(gòu)
產(chǎn)品參數(shù)
| 參數(shù)類型 | 參數(shù)值 |
|---|---|
| b'I / O\xe7\xba\xbf\xe6\x95\xb0' | 16 Bit |
| b'\xe5\x85\xb8\xe5\x9e\x8b\xe5\xb7\xa5\xe4\xbd\x9c\xe7\x94\xb5\xe6\xba\x90\xe7\x94\xb5\xe5\x8e\x8b' | 3.3 V |
| b'\xe5\x8c\x85\xe8\xa3\x85' | 48CABGA |
| b'\xe5\x9c\xb0\xe5\x9d\x80\xe6\x80\xbb\xe7\xba\xbf\xe5\xae\xbd\xe5\xba\xa6' | 18 Bit |
| b'\xe5\xad\x97\xe6\x95\xb0' | 256 K |
| b'\xe5\xae\x9a\xe6\x97\xb6\xe7\xb1\xbb\xe5\x9e\x8b' | Asynchronous |
| b'\xe5\xaf\x86\xe5\xba\xa6' | 4 Mb |
| b'\xe5\xb7\xa5\xe4\xbd\x9c\xe6\xb8\xa9\xe5\xba\xa6' | -40 to 85 °C |
| b'\xe6\xa0\x87\xe5\x87\x86\xe5\x8c\x85\xe8\xa3\x85' | Bulk |
| b'\xe7\xab\xaf\xe5\x8f\xa3\xe6\x95\xb0' | 1 |
相似產(chǎn)品
| 型號(hào) | 廠商 | 描述 | 操作 |
|---|---|---|---|
| 71V416S10BEGI8 | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA T/R | 查看詳情 |
| 71V416S10BE | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA Tube/Tray | 查看詳情 |
| 71V416S10BE8 | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA T/R | 查看詳情 |
| 71V416S10BEG | Integrated Device Technology | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA Tray | 查看詳情 |
| 71V416S10BEG | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA Tube/Tray | 查看詳情 |
| 71V416S10BEG8 | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA T/R | 查看詳情 |
| 71V416S10PH | rochester electronics | 查看詳情 | |
| 71V416S10PHG | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II Tube/Tray | 查看詳情 |
| 71V416S10PHG8 | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II T/R | 查看詳情 |
| 71V416S10PHGI | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II Tube/Tray | 查看詳情 |
| 71V416S10PHGI8 | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II T/R | 查看詳情 |
| 71V416S10YG | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin SOJ Tube/Tray | 查看詳情 |
| 71V416S10YG8 | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin SOJ T/R | 查看詳情 |
| 71V416S10YGI | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin SOJ Tube/Tray | 查看詳情 |
| 71V416S10YGI8 | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 44-Pin SOJ T/R | 查看詳情 |
| 71V416S12BE | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 48-Pin CABGA Tube/Tray | 查看詳情 |
| 71V416S12BE1 | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 48-Pin CABGA Tray | 查看詳情 |
| 71V416S12BE18 | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 48-Pin CABGA T/R | 查看詳情 |
| 71V416S12BE2 | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 48-Pin CABGA Tray | 查看詳情 |
| 71V416S12BE28 | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 48-Pin CABGA T/R | 查看詳情 |
| 71V416S12BE8 | integrated device technology (idt) | SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 48-Pin CABGA T/R | 查看詳情 |
文檔與媒體
| 資源類型 | 鏈接 |
|---|---|
| 數(shù)據(jù)表 |