BD910
Transistors Bipolar - BJT PNP General Purpose
廠商型號:
BD910
芯天下內(nèi)部編號:
390-BD910
生產(chǎn)廠商:
STMicroelectronics

描述:
Transistors Bipolar - BJT PNP General Purpose
產(chǎn)品類別:
Discrete|Transistor|GP BJT
所示圖像僅為示意圖。請從產(chǎn)品數(shù)據(jù)表中獲得準(zhǔn)確的規(guī)格。
庫存與訂購
產(chǎn)品參數(shù)
參數(shù)類型 | 參數(shù)值 |
---|---|
Maximum DC Collector Current | 15 |
Mounting | Through Hole |
Maximum Transition Frequency | 3(Min) |
Package Width | 4.6(Max) |
PCB | 3 |
Maximum Power Dissipation | 90000 |
Type | PNP |
EU RoHS | Compliant |
Pin Count | 3 |
Number of Elements per Chip | 1 |
Maximum Collector Base Voltage | 80 |
Minimum Operating Temperature | -65 |
Supplier Package | TO-220 |
Standard Package Name | TO-220 |
Maximum Operating Temperature | 150 |
Package Length | 10.4(Max) |
Maximum Collector Emitter Voltage | 80 |
Minimum DC Current Gain | 40@500mA@4V|15@5A@4V|5@10A@4V |
Package Height | 9.15(Max) |
Maximum Emitter Base Voltage | 5 |
Packaging | Tube |
Tab | Tab |
P(tot) | 90W |
Matchcode | BD910 |
I(C) | 15A |
V(CEO) | 80V |
Package | TO220 |
Unit Pack | 50 |
Standard Leadtime | 101 weeks |
MOQ | 1 |
Polarisation | PNP |
Leadfree Defin. | RoHS-conform |
Automotive | NO |
Current gain | 15 |
V(CBO) | 80V |
Current - Collector (Ic) (Max) | 15A |
Transistor Type | PNP |
Mounting Type | Through Hole |
Frequency - Transition | 3MHz |
Vce Saturation (Max) @ Ib, Ic | 3V @ 2.5A, 10A |
Current - Collector Cutoff (Max) | 1mA |
Standard Package | 50 |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Supplier Device Package | TO-220 |
Power - Max | 90W |
Package / Case | TO-220-3 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5A, 4V |
Other Names | 497-12142 |
rohs | Lead free / RoHS Compliant |
Collector Current (DC) (Max) | 15 A |
Collector-Base Voltage | 80 V |
Collector-Emitter Voltage | 80 V |
Emitter-Base Voltage | 5 V |
Frequency | 3 MHz |
Power Dissipation | 90 W |
Operating Temp Range | -65C to 150C |
Package Type | TO-220 |
Number of Elements | 1 |
DC Current Gain (Min) | 40 |
Operating Temperature Classification | Military |
Rad Hardened | No |
Transistor Polarity | PNP |
Collector Current (DC) | 15 A |
DC Current Gain | 40 |
Collector Emitter Voltage V(br)ceo | :80V |
Power Dissipation Pd | :90W |
DC Collector Current | :-10A |
DC Current Gain hFE | :40 |
Operating Temperature Max | :150°C |
Transistor Case Style | :TO-220 |
No. of Pins | :3 |
MSL | :- |
SVHC | :No SVHC (20-Jun-2013) |
Application Code | :GP |
Collector Emitter Voltage Vces | :1V |
Continuous Collector Current Ic Max | :15A |
Current Gain Hfe Max | :250 |
Current Ic @ Vce Sat | :5A |
Current Ic Continuous a Max | :-10A |
Current Ic hFE | :500mA |
Gain Bandwidth ft Min | :3MHz |
Gain Bandwidth ft Typ | :3MHz |
Hfe Min | :40 |
No. of Transistors | :1 |
Power Dissipation Ptot Max | :90W |
Termination Type | :Through Hole |
Voltage Vcbo | :80V |
Weight (kg) | 0.002 |
Tariff No. | 85412900 |