HGTG20N60A4
Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail
廠商型號:
HGTG20N60A4
芯天下內(nèi)部編號:
3-HGTG20N60A4
生產(chǎn)廠商:
fairchild semiconductor
描述:
Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail
產(chǎn)品類別:
Discrete|IGBT Chip
所示圖像僅為示意圖。請從產(chǎn)品數(shù)據(jù)表中獲得準確的規(guī)格。
庫存與訂購
產(chǎn)品參數(shù)
| 參數(shù)類型 | 參數(shù)值 |
|---|---|
| Package | 3TO-247 |
| Configuration | Single |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Continuous Collector Current | 70 A |
| Maximum Gate Emitter Voltage | ±20 V |
| Mounting | Through Hole |
| Standard Package | Rail / Tube |
| Supplier Package | TO-247 |
| Maximum Gate Emitter Voltage | ±20 |
| Maximum Continuous Collector Current | 70 |
| EU RoHS | Compliant |
| Maximum Operating Temperature | 150 |
| Package Width | 4.82 |
| Standard Package Name | TO-247 |
| Package Height | 20.82(Max) |
| Maximum Power Dissipation | 290000 |
| Channel Type | N |
| Packaging | Rail |
| Maximum Collector Emitter Voltage | 600 |
| Tab | Tab |
| PCB | 3 |
| Package Length | 15.87(Max) |
| Minimum Operating Temperature | -55 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
| Gate Charge | 142nC |
| Current - Collector (Ic) (Max) | 70A |
| Mounting Type | Through Hole |
| Switching Energy | 105μJ (on), 150μJ (off) |
| Td (on/off) @ 25°C | 15ns/73ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Supplier Device Package | TO-247 |
| Power - Max | 290W |
| Input Type | Standard |
| Package / Case | TO-247-3 |
| Test Condition | 390V, 20A, 3 Ohm, 15V |
| Current - Collector Pulsed (Icm) | 280A |
| rohs | Lead free / RoHS Compliant |
| Dimensions | 15.87 x 4.82 x 20.82mm |
| Height | 20.82mm |
| Length | 15.87mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Package Type | TO-247 |
| Width | 4.82mm |
| Factory Pack Quantity | 30 |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Product Category | IGBT Transistors |
| Gate-Emitter Leakage Current | +/- 250 nA |
| Continuous Collector Current Ic Max | 70 A |
| Series | HGTG20N60A4 |
| Continuous Collector Current at 25 C | 70 A |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Unit Weight | 0.225401 oz |
| Mounting Style | Through Hole |
| Power Dissipation | 290 W |
| Part # Aliases | HGTG20N60A4_NL |
| RoHS | RoHS Compliant |
| Collector Current (DC) | 70 A |
| Collector-Emitter Voltage | 600 V |
| Operating Temperature (Max) | 150C |
| Operating Temperature (Min) | -55C |
| Operating Temperature Classification | Military |
| Gate to Emitter Voltage (Max) | ?20 V |
| Rad Hardened | No |
| Transistor Type | :IGBT |
| DC Collector Current | :70A |
| Collector Emitter Voltage Vces | :2.7V |
| Power Dissipation Pd | :290W |
| Collector Emitter Voltage V(br)ceo | :600V |
| Operating Temperature Min | :-55°C |
| Operating Temperature Max | :150°C |
| Transistor Case Style | :TO-247 |
| No. of Pins | :3 |
| MSL | :- |
| SVHC | :No SVHC (20-Jun-2013) |
| Alternate Case Style | :SOT-249 |
| Current Ic Continuous a Max | :70A |
| Current Temperature | :25°C |
| Device Marking | :HGTG20N60A4 |
| Fall Time tf | :32ns |
| Full Power Rating Temperature | :25°C |
| No. of Transistors | :1 |
| Operating Temperature Range | :-55°C to +150°C |
| Pin Format | :GCE |
| Power Dissipation Max | :290W |
| Power Dissipation Ptot Max | :290W |
| Pulsed Current Icm | :280A |
| Rise Time | :12ns |
| Termination Type | :Through Hole |
| Transistor Polarity | :N Channel |
| Voltage Vces | :600V |
| Weight (kg) | 0.00546 |
| Tariff No. | 85416000 |
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