NCP5351DR2
Power Driver ICs 5V 4A Dual MOSFET
廠商型號(hào):
NCP5351DR2
芯天下內(nèi)部編號(hào):
277-NCP5351DR2
生產(chǎn)廠商:
ON Semiconductor
描述:
Power Driver ICs 5V 4A Dual MOSFET
產(chǎn)品類別:
Semiconductors|Power Management ICs|Power Driver ICs
所示圖像僅為示意圖。請從產(chǎn)品數(shù)據(jù)表中獲得準(zhǔn)確的規(guī)格。
庫存與訂購
產(chǎn)品參數(shù)
| 參數(shù)類型 | 參數(shù)值 |
|---|---|
| Number of Outputs | 2 |
| Mounting Type | Surface Mount |
| Number of Configurations | 1 |
| Supplier Device Package | 8-SOIC N |
| Current - Peak | 4A |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -30°C ~ 85°C |
| Voltage - Supply | 4.5 V ~ 6.3 V |
| Input Type | Inverting and Non-Inverting |
| Standard Package | 2,500 |
| High Side Voltage - Max (Bootstrap) | 25V |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Configuration | High and Low Side, Synchronous |
| Other Names | NCP5351DR2OSTR |
| Delay Time | 45ns |
| rohs | Contains lead / RoHS non-compliant |
| 輸入類型 | Inverting and Non-Inverting |
| 配置 | High and Low Side, Synchronous |
| 配置數(shù) | 1 |
| 操作溫度 | -30°C ~ 85°C |
| 電壓 - 電源 | 4.5 V ~ 6.3 V |
| 延遲時(shí)間 | 45ns |
| 封裝/外殼 | 8-SOIC (0.154", 3.90mm Width) |
| 高壓側(cè)電壓 - 最大值（啟動(dòng)） | 25V |
| 電流 - 峰值 | 4A |
| 輸出數(shù) | 2 |
相似產(chǎn)品
| 型號(hào) | 廠商 | 描述 | 操作 |
|---|---|---|---|
| NCP5351DR2G | on semiconductor | MOSFET DRVR 4A 2-OUT Hi/Lo Side Inv/Non-Inv 8-Pin SOIC N T/R | 查看詳情 |
| NCP5351DR2G/BKN | on semiconductor | MOSFET DRVR 4A 2-OUT Hi/Lo Side Inv/Non-Inv 8-Pin SOIC N T/R | 查看詳情 |
| NCP5351D | ON Semiconductor | Power Driver ICs 5V 4A Dual MOSFET | 查看詳情 |
| NCP5351DG | ON Semiconductor | Gate Drivers 5V 4A Dual MOSFET | 查看詳情 |
| NCP5351DG | rochester electronics | 查看詳情 | |
| NCP5351MNR2 | ON Semiconductor | Power Driver ICs 5V 4A Dual MOSFET | 查看詳情 |
| NCP5351MNR2G | on semiconductor | MOSFET DRVR 4A 2-OUT Hi/Lo Side Inv/Non-Inv 10-Pin DFN EP T/R | 查看詳情 |
| NCP5351MNR2G/BKN | on semiconductor | MOSFET DRVR 4A 2-OUT Hi/Lo Side Inv/Non-Inv 10-Pin DFN EP T/R | 查看詳情 |
文檔與媒體
| 資源類型 | 鏈接 |
|---|---|
| 數(shù)據(jù)表 |