TN6725A
NPN DARL MLITHIC, DBL-DIFF, SI
廠商型號:
TN6725A
芯天下內(nèi)部編號:
3-TN6725A
生產(chǎn)廠商:
fairchild semiconductor

描述:
NPN DARL MLITHIC, DBL-DIFF, SI
產(chǎn)品類別:
Discrete|Transistor|JFET
所示圖像僅為示意圖。請從產(chǎn)品數(shù)據(jù)表中獲得準(zhǔn)確的規(guī)格。
庫存與訂購
產(chǎn)品參數(shù)
參數(shù)類型 | 參數(shù)值 |
---|---|
Package | 3TO-226 |
Configuration | Single |
Type | NPN |
Maximum Collector Emitter Voltage | 50 V |
Peak DC Collector Current | 1.2 A |
Minimum DC Current Gain | 25000@200mA@5V|15000@500mA@5V|4000@1A@5V |
Maximum Collector Emitter Saturation Voltage | 1@2mA@200mA|1.5@2mA@1A V |
Maximum Collector Base Voltage | 60 V |
Mounting | Through Hole |
Standard Package | Bulk |
Current - Collector (Ic) (Max) | 1.2A |
Transistor Type | NPN - Darlington |
Mounting Type | Through Hole |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2mA, 1A |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Supplier Device Package | TO-226 |
Packaging | Bulk |
Power - Max | 1W |
Package / Case | TO-226-3, TO-92-3 Long Body |
DC Current Gain (hFE) (Min) @ Ic, Vce | 4000 @ 1A, 5V |
rohs | Lead free / RoHS Compliant |
不同?Ib、Ic 時的?Vce 飽和值(最大值) | 1.5V @ 2mA, 1A |
晶體管類型 | NPN - Darlington |
不同?Ic、Vce?時的 DC 電流增益 (hFE)(最小值) | 4000 @ 1A, 5V |
封裝/外殼 | TO-226-3, TO-92-3 Long Body |
功率 - 最大值 | 1W |
電流 - 集電極 (Ic)(最大值) | 1.2A |
電壓 - 集射極擊穿(最大值) | 50V |
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文檔與媒體
資源類型 | 鏈接 |
---|---|
數(shù)據(jù)表 |