VBP104FASR
Photodiode PIN Chip 950nm 2-Pin SMD T/R
廠商型號(hào):
VBP104FASR
芯天下內(nèi)部編號(hào):
5-VBP104FASR
生產(chǎn)廠商:
vishay / semiconductor
描述:
Photodiode PIN Chip 950nm 2-Pin SMD T/R
產(chǎn)品類別:
Optoelectronics|Infrared|Photodiode
所示圖像僅為示意圖。請(qǐng)從產(chǎn)品數(shù)據(jù)表中獲得準(zhǔn)確的規(guī)格。
庫(kù)存與訂購(gòu)
產(chǎn)品參數(shù)
| 參數(shù)類型 | 參數(shù)值 |
|---|---|
| Package | 2SMD |
| Type | Chip |
| Wavelength | 950 nm |
| Maximum Reverse Voltage | 60 V |
| Maximum Light Current | 35(Typ) uA |
| Maximum Rise Time Range | 15 to 250 ns |
| Maximum Dark Current | 30 nA |
| Photodiode Material | Si |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | 100 °C |
| Standard Package | Tape & Reel |
| Product Category | Photodiodes |
| RoHS | RoHS Compliant |
| Product | PIN Photodiodes |
| Reverse Voltage | 60 V |
| Peak Wavelength | 950 nm |
| Rise Time | 100 ns |
| Fall Time | 100 ns |
| Half Intensity Angle Degrees | 65 deg |
| Dark Current | 2 nA |
| Mounting Style | SMD/SMT |
| Noise Equivalent Power - NEP | 4E-14 W/sqrt Hz |
| Packaging | Reel |
| Photocurrent | 35 uA |
| Power Dissipation | 215 mW |
| Polarity | Forward |
| Maximum Light Current | 35(Typ) |
| Mounting | Surface Mount |
| Package Width | 3.9 |
| PCB | 2 |
| Maximum Power Dissipation | 215 |
| EU RoHS | Compliant |
| Maximum Reverse Voltage | 60 |
| Maximum Fall Time | 100(Typ) |
| Photodiode Type | PIN |
| Maximum Dark Current | 30 |
| Peak Wavelength | 950 |
| Minimum Operating Temperature | -40 |
| Supplier Package | SMD |
| Standard Package Name | SMD |
| Maximum Operating Temperature | 100 |
| Maximum Forward Voltage | 1.3 |
| Package Length | 4.4 |
| Pin Count | 2 |
| Package Height | 1.2 |
| Maximum Rise Time | 100(Typ) |
| Reverse V/Veco | 60V |
| Matchcode | VBP104FASR |
| Detection angle | 130° |
| Power dissip | 215mW |
| Unit Pack | 1000 |
| Standard Leadtime | 8 weeks |
| MOQ | 1000 |
| Sens.range min | 780nm |
| Rise/Fall time | 100ns |
| Forward V/Vceo | 1.3V |
| Op.temp.min. | -40°C |
| SMD/THT | SMD |
| Sensitive Area | 4.4mm2 |
| Dark current | 30nA |
| Automotive | NO |
| Op.temp.max. | 100°C |
| Max.sensivity | 950nm |
| Sens.range max. | 1050nm |
| Spectral Range | 780nm ~ 1050nm |
| Active Area | 4.4mm2 |
| Current - Dark (Typ) | 2nA |
| Viewing Angle | 130° |
| Operating Temperature | -40°C ~ 100°C |
| Voltage - DC Reverse (Vr) (Max) | 60V |
| Response Time | 100ns |
| Package/Case | 2-SMD, Z-Bend |
| Other Names | 751-1495-2 |
| Diode Type | PIN |
| rohs | Lead free / RoHS Compliant |
| Angle of Half Sensitivity | ±65 ° |
| Dimensions | 4.4 x 3.9 x 1.2mm |
| Diode Material | Si |
| Height | 1.2mm |
| Length | 4.4mm |
| Maximum Wavelength Detected | 1050nm |
| Minimum Wavelength Detected | 780nm |
| Mounting Type | PCB Surface Mount |
| Number of Pins | 2 |
| Package Type | Reverse Gullwing |
| Spectrums Detected | Infrared |
| Wavelength of Peak Sensitivity | 950nm |
| Width | 3.9mm |
| Forward Current | 50 mA |
| Angle of Half Sensitivity ± | :65° |
| Diode Case Style | :SMD |
| No. of Pins | :2 |
| Operating Temperature Min | :-40°C |
| Operating Temperature Max | :100°C |
| MSL | :MSL 3 - 168 hours |
| Breakdown Voltage Vbr | :60V |
| Operating Temperature Range | :-40°C to +100°C |
| Wavelength Typ | :950nm |
| Weight (kg) | 1.5 |
| Tariff No. | 85414090 |